inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc silicon npn power transistor 2N6835 description collector-emitter sustaining voltage- : v ceo(sus) = 450v(min) high switching speed applications designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. they are partic- ularly suited for line operated switch-mode applications. typical applications: switching regulators inverters motor controls deflection circuits absolute maximum ratings(t a =25 ) thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.17 /w symbol parameter value unit v cev collector-emitter voltage 850 v v ceo(sus) collector-emitter voltage 450 v v ebo emitter-base voltage 6 v i c collector current-continuous 8 a i cm collector current-peak 16 a i b base current-continuous 6 a i bm base current-peak 12 a p c collector power dissipation@t c =25 150 w t j junction temperature 200 t stg storage temperature -65~200
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor 2N6835 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ; i b =0 450 v v ce (sat)- 1 collector-emitter satu ration voltage i c = 3a; i b = 0.4a 1.2 v v ce (sat)- 2 collector-emitter sa turation voltage i c = 5a; i b = 0.66a i c = 5a; i b = 0.66a,t c =100 2.5 3.0 v v be (sat) base-emitter satu ration voltage i c = 5a; i b = 0.66a i c = 5a; i b = 0.66a,t c =100 1.5 1.5 v i cev collector cutoff current v cev = 850v;v be(off) = 1.5v v cev = 850v;v be(off) = 1.5v;t c =100 0.25 1.5 ma i cer collector cutoff current v ce = 850v; r be = 50 ,t c = 100 2.5 ma i ebo emitter cutoff current v eb = 6.0v; i c =0 1.0 ma h fe-1 dc current gain i c = 5a ; v ce = 5v 7.5 30 h fe-2 dc current gain i c = 8a ; v ce = 5v 4 f t current gain-bandwidth product i c = 0.25a ;v ce = 10v; f test =10mhz 10 75 mhz c ob output capacitance i e = 0; v cb = 10v; f test =1.0khz 50 350 pf switching times;resistive load t d delay time i c = 5a , v cc = 250v; i b1 = 0.66a; i b2 = -1.3a; p w = 30 s; r b2 = 4 duty cycle 2.0% 20 50 ns t r rise time 85 250 ns t s storage time 1000 2500 ns t f fall time 70 250 ns
|
